Goford Semiconductor G20N06D52

Goford Semiconductor G20N06D52 electronic component

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Manufacturer No
G20N06D52
Package
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 60V 20A 8DFN
Detailed Description
Mosfet Array 60V 20A (Tc) 48W (Tc) Surface Mount 8-DFN (4.9x5.75)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
TrenchFET®
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Power - Max
48W (Tc)
Manufacturer
Goford Semiconductor
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
G20N
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
30mOhm @ 20A, 10V
Supplier Device Package
8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
1326pF @ 30V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
AttributeValue
SeriesTrenchFET®
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Power - Max48W (Tc)
ManufacturerGoford Semiconductor
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberG20N
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs30mOhm @ 20A, 10V
Supplier Device Package8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds1326pF @ 30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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