GE Aerospace GE1217103A1

Name: GE1217103A1
Brand: GE Aerospace
SKU: 3635746-GE1217103A1
Availability: LimitedAvailability

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Manufacturer

Manufacturer No

GE1217103A1

Packaging

Retail Package

Description

SiC MOSFET N-Channel 1200V 171A

Detailed Description

N-Channel 1200 V 171A (Ta) 931W (Tc) Through Hole TO-247-4L

Datasheet

Mfr

GE Aerospace

FET Type

N-Channel

Packaging

Retail Package

Vgs (Max)

+23V, -15V

Technology

MOSFET (Metal Oxide)

Mounting Type

Through Hole

Vgs(th) (Max) @ Id

3.8V @ 33mA

Operating Temperature

-55°C ~ 200°C (TJ)

Rds On (Max) @ Id, Vgs

12mOhm @ 110A, 20V

Power Dissipation (Max)

931W (Tc)

Supplier Device Package

TO-247-4L

Gate Charge (Qg) (Max) @ Vgs

296 nC @ 900 V

Drain to Source Voltage (Vdss)

1200 V

Input Capacitance (Ciss) (Max) @ Vds

6930 pF @ 600 V

Drive Voltage (Max Rds On, Min Rds On)

20V

Current - Continuous Drain (Id) @ 25°C

171A (Ta)

Attribute	Value
Mfr	GE Aerospace
FET Type	N-Channel
Packaging	Retail Package
Vgs (Max)	+23V, -15V
Technology	MOSFET (Metal Oxide)
Mounting Type	Through Hole
Vgs(th) (Max) @ Id	3.8V @ 33mA
Operating Temperature	-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs	12mOhm @ 110A, 20V
Power Dissipation (Max)	931W (Tc)
Supplier Device Package	TO-247-4L
Gate Charge (Qg) (Max) @ Vgs	296 nC @ 900 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	6930 pF @ 600 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	171A (Ta)