GE Aerospace GE1206003A1

GE Aerospace GE1206003A1 electronic component

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Manufacturer
Manufacturer No
GE1206003A1
Packaging
Retail Package
Description
SiC MOSFET N-Channel 1200V 60A
Detailed Description
N-Channel 1200 V 60A 389W (Tc) Through Hole TO-247-4L
DataSheet
Mfr
GE Aerospace
FET Type
N-Channel
Packaging
Retail Package
Vgs (Max)
+23V, -15V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
3.8V @ 10.7mA
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
39mOhm @ 41A, 20V
Power Dissipation (Max)
389W (Tc)
Supplier Device Package
TO-247-4L
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 900 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
2120 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
60A
AttributeValue
MfrGE Aerospace
FET TypeN-Channel
PackagingRetail Package
Vgs (Max)+23V, -15V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Vgs(th) (Max) @ Id3.8V @ 10.7mA
Operating Temperature-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs39mOhm @ 41A, 20V
Power Dissipation (Max)389W (Tc)
Supplier Device PackageTO-247-4L
Gate Charge (Qg) (Max) @ Vgs95 nC @ 900 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds2120 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C60A

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Step2: Vacuum Packaging
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Packaging boxes
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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