GE Aerospace GE1211103A1

GE Aerospace GE1211103A1 electronic component

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Manufacturer
Manufacturer No
GE1211103A1
Package
TO-247-4L
Packaging
Retail Package
Description
SiC MOSFET
Detailed Description
N-Channel 1200 V 111A (Ta) 660W (Tc) Through Hole TO-247-4L
DataSheet
Mfr
GE Aerospace
Grade
Automotive
FET Type
N-Channel
Packaging
Retail Package
Vgs (Max)
+23V, -15V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Qualification
AEC-Q101
Package / Case
TO-247-4L
Vgs(th) (Max) @ Id
3.8V @ 20mA
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
20mOhm @ 75A, 20V
Power Dissipation (Max)
660W (Tc)
Supplier Device Package
TO-247-4L
Gate Charge (Qg) (Max) @ Vgs
172 nC @ 900 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
3982 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
111A (Ta)
AttributeValue
MfrGE Aerospace
GradeAutomotive
FET TypeN-Channel
PackagingRetail Package
Vgs (Max)+23V, -15V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
QualificationAEC-Q101
Package / CaseTO-247-4L
Vgs(th) (Max) @ Id3.8V @ 20mA
Operating Temperature-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs20mOhm @ 75A, 20V
Power Dissipation (Max)660W (Tc)
Supplier Device PackageTO-247-4L
Gate Charge (Qg) (Max) @ Vgs172 nC @ 900 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds3982 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C111A (Ta)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
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Packaging boxes
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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