Diodes Incorporated DMT10H025SSS-13

Diodes Incorporated DMT10H025SSS-13 electronic component

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Manufacturer No
DMT10H025SSS-13
Quantity
66
Availability
In Stock
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 100V 7.4A 8SO
Detailed Description
N-Channel 100 V 7.4A (Ta) 1.4W (Ta) Surface Mount 8-SO
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
DMT10
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
23mOhm @ 20A, 10V
Power Dissipation (Max)
1.4W (Ta)
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
21.4 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
1544 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
7.4A (Ta)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberDMT10
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Power Dissipation (Max)1.4W (Ta)
Supplier Device Package8-SO
Gate Charge (Qg) (Max) @ Vgs21.4 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds1544 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta)

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