Diodes Incorporated DMT10H015SK3-13

Diodes Incorporated DMT10H015SK3-13 electronic component

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Manufacturer No
DMT10H015SK3-13
Quantity
50
Availability
In Stock
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 100V 54A TO252
Detailed Description
N-Channel 100 V 54A (Tc) 1.8W (Ta), 4.2W (Tc) Surface Mount TO-252 (DPAK)
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
DMT10
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 20A, 10V
Power Dissipation (Max)
1.8W (Ta), 4.2W (Tc)
Supplier Device Package
TO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs
30.1 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
2343 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
54A (Tc)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberDMT10
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs14mOhm @ 20A, 10V
Power Dissipation (Max)1.8W (Ta), 4.2W (Tc)
Supplier Device PackageTO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs30.1 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2343 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C54A (Tc)

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