Diodes Incorporated DMN2015UFDE-7

Diodes Incorporated DMN2015UFDE-7 electronic component

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Manufacturer No
DMN2015UFDE-7
Quantity
2990
Availability
In Stock
Package
6-PowerUDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 20V 10.5A 6UDFN
Detailed Description
N-Channel 20 V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
6-PowerUDFN
Vgs(th) (Max) @ Id
1.1V @ 250µA
Base Product Number
DMN2015
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
11.6mOhm @ 8.5A, 4.5V
Power Dissipation (Max)
660mW (Ta)
Supplier Device Package
U-DFN2020-6 (Type E)
Gate Charge (Qg) (Max) @ Vgs
45.6 nC @ 10 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
1779 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
10.5A (Ta)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case6-PowerUDFN
Vgs(th) (Max) @ Id1.1V @ 250µA
Base Product NumberDMN2015
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs11.6mOhm @ 8.5A, 4.5V
Power Dissipation (Max)660mW (Ta)
Supplier Device PackageU-DFN2020-6 (Type E)
Gate Charge (Qg) (Max) @ Vgs45.6 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1779 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.5A (Ta)

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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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