YAGEO XSEMI XP3N1R8MT

YAGEO XSEMI XP3N1R8MT electronic component

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Manufacturer
Manufacturer No
XP3N1R8MT
Package
8-PowerLDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
FET N-CH 30V 40.6A 165A PMPAK
Detailed Description
N-Channel 30 V 40.6A (Ta), 165A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount 8-PMPAK (5x6)
DataSheet
Mfr
YAGEO XSEMI
Series
XP3N1R8
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-PowerLDFN
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.89mOhm @ 20A, 10V
Power Dissipation (Max)
5W (Ta), 83.3W (Tc)
Supplier Device Package
8-PMPAK (5x6)
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
4850 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
40.6A (Ta), 165A (Tc)
AttributeValue
MfrYAGEO XSEMI
SeriesXP3N1R8
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / Case8-PowerLDFN
Vgs(th) (Max) @ Id3V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.89mOhm @ 20A, 10V
Power Dissipation (Max)5W (Ta), 83.3W (Tc)
Supplier Device Package8-PMPAK (5x6)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds4850 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C40.6A (Ta), 165A (Tc)

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Packing

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Vacuum packaged product
Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Packaging boxes
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Shipping Information

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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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