YAGEO XSEMI XP10NA011J

YAGEO XSEMI XP10NA011J electronic component

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Manufacturer
Manufacturer No
XP10NA011J
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging
Tube
Description
MOSFET N-CH 100V 48.5A TO251S
Detailed Description
N-Channel 100 V 48.5A (Tc) 1.13W (Ta), 50W (Tc) Through Hole TO-251S
DataSheet
Mfr
YAGEO XSEMI
Series
XS10NA011
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
11mOhm @ 30A, 10V
Power Dissipation (Max)
1.13W (Ta), 50W (Tc)
Supplier Device Package
TO-251S
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
2288 pF @ 80 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
48.5A (Tc)
AttributeValue
MfrYAGEO XSEMI
SeriesXS10NA011
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs11mOhm @ 30A, 10V
Power Dissipation (Max)1.13W (Ta), 50W (Tc)
Supplier Device PackageTO-251S
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2288 pF @ 80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C48.5A (Tc)

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Shipping Information

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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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