Vishay Siliconix SIHU3N50D-GE3

Vishay Siliconix SIHU3N50D-GE3 electronic component

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Manufacturer
Manufacturer No
SIHU3N50D-GE3
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging
Tube
Description
MOSFET N-CH 500V 3A TO251
Detailed Description
N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole TO-251AA
DataSheet
Mfr
Vishay Siliconix
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id
5V @ 250µA
Base Product Number
SIHU3
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.2Ohm @ 2.5A, 10V
Power Dissipation (Max)
69W (Tc)
Supplier Device Package
TO-251AA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Drain to Source Voltage (Vdss)
500 V
Input Capacitance (Ciss) (Max) @ Vds
175 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
AttributeValue
MfrVishay Siliconix
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id5V @ 250µA
Base Product NumberSIHU3
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs3.2Ohm @ 2.5A, 10V
Power Dissipation (Max)69W (Tc)
Supplier Device PackageTO-251AA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3A (Tc)

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Packing

Product before packing
Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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