Vishay Siliconix SIHB24N80AE-GE3

Vishay Siliconix SIHB24N80AE-GE3 electronic component

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Manufacturer
Manufacturer No
SIHB24N80AE-GE3
Quantity
168
Availability
In Stock
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tube
Description
MOSFET N-CH 800V 21A D2PAK
Detailed Description
N-Channel 800 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
DataSheet
Mfr
Vishay Siliconix
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
SIHB24
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Power Dissipation (Max)
208W (Tc)
Supplier Device Package
TO-263 (D2PAK)
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Drain to Source Voltage (Vdss)
800 V
Input Capacitance (Ciss) (Max) @ Vds
1836 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
AttributeValue
MfrVishay Siliconix
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberSIHB24
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs184mOhm @ 10A, 10V
Power Dissipation (Max)208W (Tc)
Supplier Device PackageTO-263 (D2PAK)
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds1836 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
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Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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