Vishay Siliconix SI5935CDC-T1-GE3

Vishay Siliconix SI5935CDC-T1-GE3 electronic component

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Manufacturer
Manufacturer No
SI5935CDC-T1-GE3
Quantity
9095
Availability
In Stock
Package
8-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET 2P-CH 20V 4A 1206-8
Detailed Description
Mosfet Array 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
DataSheet
Series
TrenchFET®
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
Part Status
Active
Power - Max
3.1W
Manufacturer
Vishay Siliconix
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Leads
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
SI5935
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 3.1A, 4.5V
Supplier Device Package
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs
11nC @ 5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
455pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4A
AttributeValue
SeriesTrenchFET®
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Power - Max3.1W
ManufacturerVishay Siliconix
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Leads
Vgs(th) (Max) @ Id1V @ 250µA
Base Product NumberSI5935
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs100mOhm @ 3.1A, 4.5V
Supplier Device Package1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
Current - Continuous Drain (Id) @ 25°C4A

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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