Vishay Siliconix SI3473DDV-T1-GE3

Vishay Siliconix SI3473DDV-T1-GE3 electronic component

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Manufacturer
Manufacturer No
SI3473DDV-T1-GE3
Quantity
15
Availability
In Stock
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CHANNEL 12V 8A 6TSOP
Detailed Description
P-Channel 12 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
DataSheet
Mfr
Vishay Siliconix
Series
TrenchFET® Gen III
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
SI3473
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
17.8mOhm @ 8.7A, 4.5V
Power Dissipation (Max)
3.6W (Tc)
Supplier Device Package
6-TSOP
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 8 V
Drain to Source Voltage (Vdss)
12 V
Input Capacitance (Ciss) (Max) @ Vds
1975 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
AttributeValue
MfrVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id1V @ 250µA
Base Product NumberSI3473
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs17.8mOhm @ 8.7A, 4.5V
Power Dissipation (Max)3.6W (Tc)
Supplier Device Package6-TSOP
Gate Charge (Qg) (Max) @ Vgs57 nC @ 8 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1975 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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