Vishay Siliconix SI2356DS-T1-BE3

Vishay Siliconix SI2356DS-T1-BE3 electronic component

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Manufacturer
Manufacturer No
SI2356DS-T1-BE3
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
N-CHANNEL 40-V (D-S) MOSFET
Detailed Description
N-Channel 40 V 3.2A (Ta), 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Vishay Siliconix
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
51mOhm @ 3.2A, 10V
Power Dissipation (Max)
960mW (Ta), 1.7W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta), 4.3A (Tc)
AttributeValue
MfrVishay Siliconix
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id1.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs51mOhm @ 3.2A, 10V
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Supplier Device PackageSOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta), 4.3A (Tc)

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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