Vishay Siliconix SI2347DS-T1-GE3

Vishay Siliconix SI2347DS-T1-GE3 electronic component

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Manufacturer
Manufacturer No
SI2347DS-T1-GE3
Quantity
40565
Availability
In Stock
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 30V 5A SOT23-3
Detailed Description
P-Channel 30 V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
DataSheet
Mfr
Vishay Siliconix
Series
TrenchFET®
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
SI2347
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
42mOhm @ 3.8A, 10V
Power Dissipation (Max)
1.7W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
AttributeValue
MfrVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberSI2347
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs42mOhm @ 3.8A, 10V
Power Dissipation (Max)1.7W (Tc)
Supplier Device PackageSOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Tc)

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Packing

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