Toshiba Semiconductor and Storage XPN9R614MC,L1XHQ

Toshiba Semiconductor and Storage XPN9R614MC,L1XHQ electronic component

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Manufacturer No
XPN9R614MC,L1XHQ
Date Code
24+
Quantity
4,990
Availability
In Stock
Package
8-PowerVDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET P-CH 40V 40A 8TSON
Detailed Description
P-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Toshiba Semiconductor and Storage
Grade
Automotive
Series
U-MOSVI
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
+10V, -20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.1V @ 500µA
Base Product Number
XPN9R614
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
9.6mOhm @ 20A, 10V
Power Dissipation (Max)
840mW (Ta), 100W (Tc)
Supplier Device Package
8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
GradeAutomotive
SeriesU-MOSVI
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)+10V, -20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / Case8-PowerVDFN
Vgs(th) (Max) @ Id2.1V @ 500µA
Base Product NumberXPN9R614
Operating Temperature175°C
Rds On (Max) @ Id, Vgs9.6mOhm @ 20A, 10V
Power Dissipation (Max)840mW (Ta), 100W (Tc)
Supplier Device Package8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Ta)

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Shipped from
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Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
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