Toshiba Semiconductor and Storage TW045N120C,S1F

Toshiba Semiconductor and Storage TW045N120C,S1F electronic component

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Manufacturer No
TW045N120C,S1F
Package
TO-247-3
Packaging
Tube
Description
G3 1200V SIC-MOSFET TO-247 45MO
Detailed Description
N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247
DataSheet
Mfr
Toshiba Semiconductor and Storage
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 6.7mA
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 18V
Power Dissipation (Max)
182W (Tc)
Supplier Device Package
TO-247
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
AttributeValue
MfrToshiba Semiconductor and Storage
FET TypeN-Channel
PackagingTube
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id5V @ 6.7mA
Operating Temperature175°C
Rds On (Max) @ Id, Vgs59mOhm @ 20A, 18V
Power Dissipation (Max)182W (Tc)
Supplier Device PackageTO-247
Gate Charge (Qg) (Max) @ Vgs57 nC @ 18 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1969 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)18V
Current - Continuous Drain (Id) @ 25°C40A (Tc)

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