Toshiba Semiconductor and Storage TRS30N120HB,S1Q

Toshiba Semiconductor and Storage TRS30N120HB,S1Q electronic component

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Manufacturer No
TRS30N120HB,S1Q
Package
TO-247-3
Packaging
Tube
Description
1200V30A SIC SCHOTTKY BARR DIODE
Detailed Description
Diode Array 1 Pair Common Cathode 1200 V 41A Through Hole TO-247-3
DataSheet
Speed
No Recovery Time > 500mA (Io)
Packaging
Tube
Technology
SiC (Silicon Carbide) Schottky
Part Status
Active
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Through Hole
Package / Case
TO-247-3
Diode Configuration
1 Pair Common Cathode
Supplier Device Package
TO-247
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)
1200 V
Operating Temperature - Junction
175°C
Voltage - Forward (Vf) (Max) @ If
1.45 V @ 15 A
Current - Average Rectified (Io) (per Diode)
41A
AttributeValue
SpeedNo Recovery Time > 500mA (Io)
PackagingTube
TechnologySiC (Silicon Carbide) Schottky
Part StatusActive
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Package / CaseTO-247-3
Diode Configuration1 Pair Common Cathode
Supplier Device PackageTO-247
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr100 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)1200 V
Operating Temperature - Junction175°C
Voltage - Forward (Vf) (Max) @ If1.45 V @ 15 A
Current - Average Rectified (Io) (per Diode)41A

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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