Toshiba Semiconductor and Storage TRS30H120H,S1Q

Toshiba Semiconductor and Storage TRS30H120H,S1Q electronic component

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Manufacturer No
TRS30H120H,S1Q
Package
TO-247-2
Packaging
Tube
Description
1200 V/30 A SIC SCHOTTKY BARRIER
Detailed Description
Diode 1200 V 83A Through Hole TO-247-2L
DataSheet
Mfr
Toshiba Semiconductor and Storage
Speed
Zero Recovery Time > 500mA (Io)
Packaging
Tube
Technology
SiC (Silicon Carbide) Schottky
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-2
Capacitance @ Vr, F
3205pF @ 1V, 1MHz
Supplier Device Package
TO-247-2L
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
180 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
83A
Operating Temperature - Junction
175°C
Voltage - Forward (Vf) (Max) @ If
1.45 V @ 30 A
AttributeValue
MfrToshiba Semiconductor and Storage
SpeedZero Recovery Time > 500mA (Io)
PackagingTube
TechnologySiC (Silicon Carbide) Schottky
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-247-2
Capacitance @ Vr, F3205pF @ 1V, 1MHz
Supplier Device PackageTO-247-2L
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr180 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)83A
Operating Temperature - Junction175°C
Voltage - Forward (Vf) (Max) @ If1.45 V @ 30 A

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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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