Toshiba Semiconductor and Storage TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage TPCP8003-H(TE85L,F electronic component

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Manufacturer No
TPCP8003-H(TE85L,F
Package
8-SMD, Flat Leads
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 100V 2.2A PS-8
Detailed Description
N-Channel 100 V 2.2A (Ta) 840mW (Ta) Surface Mount PS-8 (2.9x2.4)
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIII-H
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Leads
Vgs(th) (Max) @ Id
2.3V @ 1mA
Base Product Number
TPCP8003
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
180mOhm @ 1.1A, 10V
Power Dissipation (Max)
840mW (Ta)
Supplier Device Package
PS-8 (2.9x2.4)
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSIII-H
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Leads
Vgs(th) (Max) @ Id2.3V @ 1mA
Base Product NumberTPCP8003
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs180mOhm @ 1.1A, 10V
Power Dissipation (Max)840mW (Ta)
Supplier Device PackagePS-8 (2.9x2.4)
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)

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