Step1: Product
Toshiba Semiconductor and Storage TK8A50DA(STA4,Q,M)
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Manufacturer
Manufacturer No
TK8A50DA(STA4,Q,M)
Date Code
12+
Quantity
60
Availability
In Stock
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 500V 7.5A TO220SIS
Detailed Description
N-Channel 500 V 7.5A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4.4V @ 1mA
Base Product Number
TK8A50
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
1.04Ohm @ 3.8A, 10V
Power Dissipation (Max)
35W (Tc)
Supplier Device Package
TO-220SIS
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Drain to Source Voltage (Vdss)
500 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
7.5A (Ta)
| Attribute | Value |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSVII |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Base Product Number | TK8A50 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.04Ohm @ 3.8A, 10V |
| Power Dissipation (Max) | 35W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
Purchase & Inquiry
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Important Notes
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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