Toshiba Semiconductor and Storage TK110A65Z,S4X

Toshiba Semiconductor and Storage TK110A65Z,S4X electronic component

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Manufacturer No
TK110A65Z,S4X
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 650V 24A TO220SIS
Detailed Description
N-Channel 650 V 24A (Ta) 45W (Tc) Through Hole TO-220SIS
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSVI
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4V @ 1.02mA
Base Product Number
TK110A65
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Power Dissipation (Max)
45W (Tc)
Supplier Device Package
TO-220SIS
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
24A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesDTMOSVI
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Vgs(th) (Max) @ Id4V @ 1.02mA
Base Product NumberTK110A65
Operating Temperature150°C
Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V
Power Dissipation (Max)45W (Tc)
Supplier Device PackageTO-220SIS
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Ta)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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