Step1: Product
Toshiba Semiconductor and Storage SSM3K16CT,L3F
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Manufacturer
Manufacturer No
SSM3K16CT,L3F
Quantity
13,860
Availability
In Stock
Package
SC-101, SOT-883
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET N-CH 20V 100MA CST3
Detailed Description
N-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
Datasheet
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSIV
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Vgs(th) (Max) @ Id
1.1V @ 100µA
Base Product Number
SSM3K16
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
3Ohm @ 10mA, 4V
Power Dissipation (Max)
100mW (Ta)
Supplier Device Package
CST3
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
9.3 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
| Attribute | Value |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSIV |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR); Cut Tape (CT) |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Base Product Number | SSM3K16 |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Power Dissipation (Max) | 100mW (Ta) |
| Supplier Device Package | CST3 |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3 pF @ 3 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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