Toshiba Semiconductor and Storage SSM3J35AMFV,L3F

Toshiba Semiconductor and Storage SSM3J35AMFV,L3F electronic component

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Manufacturer No
SSM3J35AMFV,L3F
Quantity
4355
Availability
In Stock
Package
SOT-723
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 20V 250MA VESM
Detailed Description
P-Channel 20 V 250mA (Ta) 150mW (Ta) Surface Mount VESM
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVII
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-723
Vgs(th) (Max) @ Id
1V @ 100µA
Base Product Number
SSM3J35
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
1.4Ohm @ 150mA, 4.5V
Power Dissipation (Max)
150mW (Ta)
Supplier Device Package
VESM
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
42 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVII
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseSOT-723
Vgs(th) (Max) @ Id1V @ 100µA
Base Product NumberSSM3J35
Operating Temperature150°C
Rds On (Max) @ Id, Vgs1.4Ohm @ 150mA, 4.5V
Power Dissipation (Max)150mW (Ta)
Supplier Device PackageVESM
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds42 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)

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Packing

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Step1: Product
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Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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