Toshiba Semiconductor and Storage RN1907,LF

Toshiba Semiconductor and Storage RN1907,LF electronic component

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Manufacturer No
RN1907,LF
Package
6-TSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR)
Description
TRANS PREBIAS 2NPN 50V 100MA US6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
DataSheet
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Power - Max
200mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Base Product Number
RN1907
Resistor - Base (R1)
10kOhms
Frequency - Transition
250MHz
Supplier Device Package
US6
Resistor - Emitter Base (R2)
47kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
PackagingTape & Reel (TR)
Part StatusObsolete
Power - Max200mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Transistor Type2 NPN - Pre-Biased (Dual)
Base Product NumberRN1907
Resistor - Base (R1)10kOhms
Frequency - Transition250MHz
Supplier Device PackageUS6
Resistor - Emitter Base (R2)47kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

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