Toshiba Semiconductor and Storage RN1903FE,LF(CT

Toshiba Semiconductor and Storage RN1903FE,LF(CT electronic component

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Manufacturer No
RN1903FE,LF(CT
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
TRANS PREBIAS 2NPN 50V 100MA ES6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DataSheet
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part Status
Active
Power - Max
100mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Type
2 NPN - Pre-Biased (Dual)
Base Product Number
RN1903
Resistor - Base (R1)
22kOhms
Frequency - Transition
250MHz
Supplier Device Package
ES6
Resistor - Emitter Base (R2)
22kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part StatusActive
Power - Max100mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Transistor Type2 NPN - Pre-Biased (Dual)
Base Product NumberRN1903
Resistor - Base (R1)22kOhms
Frequency - Transition250MHz
Supplier Device PackageES6
Resistor - Emitter Base (R2)22kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

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