Toshiba Semiconductor and Storage HN1B04FE-Y,LXHF

Toshiba Semiconductor and Storage HN1B04FE-Y,LXHF electronic component

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Manufacturer No
HN1B04FE-Y,LXHF
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
TRANS NPN/PNP 50V 150MA ES6
Detailed Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 80MHz 100mW Surface Mount ES6
DataSheet
Grade
Automotive
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part Status
Active
Power - Max
100mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
SOT-563, SOT-666
Transistor Type
1 NPN, 1 PNP
Base Product Number
HN1B04
Operating Temperature
150°C (TJ)
Frequency - Transition
80MHz
Supplier Device Package
ES6
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
150mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
GradeAutomotive
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part StatusActive
Power - Max100mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseSOT-563, SOT-666
Transistor Type1 NPN, 1 PNP
Base Product NumberHN1B04
Operating Temperature150°C (TJ)
Frequency - Transition80MHz
Supplier Device PackageES6
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)150mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)50V

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