Toshiba Semiconductor and Storage HN1A01FU-GR,LF

Toshiba Semiconductor and Storage HN1A01FU-GR,LF electronic component

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Manufacturer No
HN1A01FU-GR,LF
Quantity
1080
Availability
In Stock
Package
6-TSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
TRANS 2PNP DUAL 50V 150MA US6
Detailed Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
DataSheet
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part Status
Active
Power - Max
200mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Base Product Number
HN1A01
Operating Temperature
125°C (TJ)
Frequency - Transition
80MHz
Supplier Device Package
US6
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
150mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Part StatusActive
Power - Max200mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Transistor Type2 PNP (Dual)
Base Product NumberHN1A01
Operating Temperature125°C (TJ)
Frequency - Transition80MHz
Supplier Device PackageUS6
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)150mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)50V

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