Toshiba Semiconductor and Storage 2SK3565(Q,M)

Toshiba Semiconductor and Storage 2SK3565(Q,M) electronic component

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Manufacturer No
2SK3565(Q,M)
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 900V 5A TO220SIS
Detailed Description
N-Channel 900 V 5A (Ta) 45W (Tc) Through Hole TO-220SIS
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSIV
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4V @ 1mA
Base Product Number
2SK3565
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Power Dissipation (Max)
45W (Tc)
Supplier Device Package
TO-220SIS
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Drain to Source Voltage (Vdss)
900 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
Seriesπ-MOSIV
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Vgs(th) (Max) @ Id4V @ 1mA
Base Product Number2SK3565
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs2.5Ohm @ 3A, 10V
Power Dissipation (Max)45W (Tc)
Supplier Device PackageTO-220SIS
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

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