Toshiba Semiconductor and Storage 2SK3388(TE24L,Q)

Toshiba Semiconductor and Storage 2SK3388(TE24L,Q) electronic component

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Manufacturer No
2SK3388(TE24L,Q)
Package
SC-97
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 250V 20A 4TFP
Detailed Description
N-Channel 250 V 20A (Ta) 125W (Tc) Surface Mount 4-TFP (9.2x9.2)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Toshiba Semiconductor and Storage
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
SC-97
Vgs(th) (Max) @ Id
3.5V @ 1mA
Base Product Number
2SK3388
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
105mOhm @ 10A, 10V
Power Dissipation (Max)
125W (Tc)
Supplier Device Package
4-TFP (9.2x9.2)
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Drain to Source Voltage (Vdss)
250 V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseSC-97
Vgs(th) (Max) @ Id3.5V @ 1mA
Base Product Number2SK3388
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs105mOhm @ 10A, 10V
Power Dissipation (Max)125W (Tc)
Supplier Device Package4-TFP (9.2x9.2)
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Ta)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
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