Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J

Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J electronic component

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Manufacturer No
2SC5201,T6MURAF(J
Package
TO-226-3, TO-92-3 Long Body
Packaging
Bulk
Description
TRANS NPN 600V 0.05A TO-92MOD
Detailed Description
Bipolar (BJT) Transistor NPN 600 V 50 mA 900 mW Through Hole TO-92MOD
DataSheet
Mfr
Toshiba Semiconductor and Storage
Packaging
Bulk
Part Status
Obsolete
Power - Max
900 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
NPN
Base Product Number
2SC5201
Operating Temperature
150°C (TJ)
Supplier Device Package
TO-92MOD
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 20mA
Current - Collector (Ic) (Max)
50 mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max)
600 V
AttributeValue
MfrToshiba Semiconductor and Storage
PackagingBulk
Part StatusObsolete
Power - Max900 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Transistor TypeNPN
Base Product Number2SC5201
Operating Temperature150°C (TJ)
Supplier Device PackageTO-92MOD
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 20mA
Current - Collector (Ic) (Max)50 mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max)600 V

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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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