Taiwan Semiconductor Corporation TSM680P06DPQ56 RLG

Taiwan Semiconductor Corporation TSM680P06DPQ56 RLG electronic component

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Manufacturer No
TSM680P06DPQ56 RLG
Package
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2P-CH 60V 12A 8PDFN
Detailed Description
Mosfet Array 60V 12A (Tc) 3.5W Surface Mount 8-PDFN (5x6)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Power - Max
3.5W
Manufacturer
Taiwan Semiconductor Corporation
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
TSM680
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
68mOhm @ 6A, 10V
Supplier Device Package
8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs
16.4nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 30V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Power - Max3.5W
ManufacturerTaiwan Semiconductor Corporation
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberTSM680
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs68mOhm @ 6A, 10V
Supplier Device Package8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs16.4nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
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