STMicroelectronics SCT10N120H

STMicroelectronics SCT10N120H electronic component

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Manufacturer
Manufacturer No
SCT10N120H
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR)
Description
SICFET N-CH 1200V 12A H2PAK-2
Detailed Description
N-Channel 1200 V 12A (Tc) 150W (Tc) Surface Mount H2Pak-2
DataSheet
Mfr
STMicroelectronics
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
3.5V @ 250µA
Base Product Number
SCT10
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
H2Pak-2
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
AttributeValue
MfrSTMicroelectronics
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id3.5V @ 250µA
Base Product NumberSCT10
Operating Temperature-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Power Dissipation (Max)150W (Tc)
Supplier Device PackageH2Pak-2
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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