STMicroelectronics SCT10N120AG

STMicroelectronics SCT10N120AG electronic component

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Manufacturer
Manufacturer No
SCT10N120AG
Package
TO-247-3
Packaging
Tube
Description
SICFET N-CH 1200V 12A HIP247
Detailed Description
N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™
DataSheet
Mfr
STMicroelectronics
Grade
Automotive
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Active
Mounting Type
Through Hole
Qualification
AEC-Q101
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
3.5V @ 250µA
Base Product Number
SCT10
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
HiP247™
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
AttributeValue
MfrSTMicroelectronics
GradeAutomotive
FET TypeN-Channel
PackagingTube
Vgs (Max)+25V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusActive
Mounting TypeThrough Hole
QualificationAEC-Q101
Package / CaseTO-247-3
Vgs(th) (Max) @ Id3.5V @ 250µA
Base Product NumberSCT10
Operating Temperature-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Power Dissipation (Max)150W (Tc)
Supplier Device PackageHiP247™
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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