ROHM Semiconductor EMG3T2R

ROHM Semiconductor EMG3T2R electronic component

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Manufacturer
Manufacturer No
EMG3T2R
Quantity
6,455
Availability
In Stock
Package
SC-75, SOT-416
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS PREBIAS 2NPN 50V EMT3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
150mW
Manufacturer
Rohm Semiconductor
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Transistor Type
2 NPN - Pre-Biased (Dual)
Base Product Number
EMG3T2
Resistor - Base (R1)
4.7kOhms
Frequency - Transition
250MHz
Supplier Device Package
EMT3
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max150mW
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Transistor Type2 NPN - Pre-Biased (Dual)
Base Product NumberEMG3T2
Resistor - Base (R1)4.7kOhms
Frequency - Transition250MHz
Supplier Device PackageEMT3
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
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