Renesas Electronics Corporation NP36P04KDG-E1-AY

Renesas Electronics Corporation NP36P04KDG-E1-AY electronic component

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Manufacturer No
NP36P04KDG-E1-AY
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 40V 36A TO263
Detailed Description
P-Channel 40 V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
DataSheet
Mfr
Renesas Electronics Corporation
Grade
Automotive
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
17mOhm @ 18A, 10V
Power Dissipation (Max)
1.8W (Ta), 56W (Tc)
Supplier Device Package
TO-263
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
AttributeValue
MfrRenesas Electronics Corporation
GradeAutomotive
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id2.5V @ 1mA
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs17mOhm @ 18A, 10V
Power Dissipation (Max)1.8W (Ta), 56W (Tc)
Supplier Device PackageTO-263
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)

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Packing

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