onsemi NTJD4152PT1G

onsemi NTJD4152PT1G electronic component

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Manufacturer
Manufacturer No
NTJD4152PT1G
Quantity
6,310
Availability
In Stock
Package
6-TSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2P-CH 20V 0.88A SC88
Detailed Description
Mosfet Array 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
272mW
Manufacturer
onsemi
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id
1.2V @ 250µA
Base Product Number
NTJD4152
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
260mOhm @ 880mA, 4.5V
Supplier Device Package
SC-88/SC70-6/SOT-363
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
155pF @ 20V
Current - Continuous Drain (Id) @ 25°C
880mA
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max272mW
Manufactureronsemi
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id1.2V @ 250µA
Base Product NumberNTJD4152
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs260mOhm @ 880mA, 4.5V
Supplier Device PackageSC-88/SC70-6/SOT-363
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds155pF @ 20V
Current - Continuous Drain (Id) @ 25°C880mA

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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