NXP USA Inc. PMV65XPEA215

NXP USA Inc. PMV65XPEA215 electronic component

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Manufacturer
Manufacturer No
PMV65XPEA215
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Bulk
Description
P-CHANNEL MOSFET
Detailed Description
P-Channel 20 V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
DataSheet
Mfr
NXP USA Inc.
Grade
Automotive
FET Type
P-Channel
Packaging
Bulk
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1.25V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
78mOhm @ 2.8A, 4.5V
Power Dissipation (Max)
480mW (Ta), 6.25W (Tc)
Supplier Device Package
TO-236AB
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
618 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)
AttributeValue
MfrNXP USA Inc.
GradeAutomotive
FET TypeP-Channel
PackagingBulk
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id1.25V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs78mOhm @ 2.8A, 4.5V
Power Dissipation (Max)480mW (Ta), 6.25W (Tc)
Supplier Device PackageTO-236AB
Gate Charge (Qg) (Max) @ Vgs9 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds618 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)

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