Infineon Technologies IRFB3306PBF

Infineon Technologies IRFB3306PBF electronic component

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Manufacturer No
IRFB3306PBF
Date Code
2221
Quantity
16,790
Availability
In Stock
Package
TO-220-3
Packaging
Tube
Description
MOSFET N-CH 60V 120A TO220AB
Detailed Description
N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-220AB
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 150µA
Base Product Number
IRFB3306
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
Power Dissipation (Max)
230W (Tc)
Supplier Device Package
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id4V @ 150µA
Base Product NumberIRFB3306
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs4.2mOhm @ 75A, 10V
Power Dissipation (Max)230W (Tc)
Supplier Device PackageTO-220AB
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds4520 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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