Infineon Technologies IRFB3206PBF

Infineon Technologies IRFB3206PBF electronic component

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Manufacturer No
IRFB3206PBF
Quantity
522
Availability
In Stock
Package
TO-220-3
Packaging
Tube
Description
MOSFET N-CH 60V 120A TO220AB
Detailed Description
N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-220AB
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 150µA
Base Product Number
IRFB3206
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
3mOhm @ 75A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id4V @ 150µA
Base Product NumberIRFB3206
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs3mOhm @ 75A, 10V
Power Dissipation (Max)300W (Tc)
Supplier Device PackageTO-220AB
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds6540 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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Packing

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Vacuum packaged product
Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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