Infineon Technologies IRF6623TRPBF

Infineon Technologies IRF6623TRPBF electronic component

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Manufacturer No
IRF6623TRPBF
Quantity
13
Availability
In Stock
Package
DirectFET™ Isometric ST
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 20V 16A DIRECTFET
Detailed Description
N-Channel 20 V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Last Time Buy
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric ST
Vgs(th) (Max) @ Id
2.2V @ 250µA
Base Product Number
IRF6623
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5.7mOhm @ 15A, 10V
Power Dissipation (Max)
1.4W (Ta), 42W (Tc)
Supplier Device Package
DIRECTFET™ ST
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
1360 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 55A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusLast Time Buy
Mounting TypeSurface Mount
Package / CaseDirectFET™ Isometric ST
Vgs(th) (Max) @ Id2.2V @ 250µA
Base Product NumberIRF6623
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs5.7mOhm @ 15A, 10V
Power Dissipation (Max)1.4W (Ta), 42W (Tc)
Supplier Device PackageDIRECTFET™ ST
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1360 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 55A (Tc)

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Packing

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