Infineon Technologies IRF6617TRPBF

Infineon Technologies IRF6617TRPBF electronic component

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Manufacturer No
IRF6617TRPBF
Quantity
20
Availability
In Stock
Package
DirectFET™ Isometric ST
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 30V 14A DIRECTFET
Detailed Description
N-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
DataSheet
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric ST
Vgs(th) (Max) @ Id
2.35V @ 250µA
Base Product Number
IRF6617
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8.1mOhm @ 15A, 10V
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Supplier Device Package
DIRECTFET™ ST
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 55A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseDirectFET™ Isometric ST
Vgs(th) (Max) @ Id2.35V @ 250µA
Base Product NumberIRF6617
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs8.1mOhm @ 15A, 10V
Power Dissipation (Max)2.1W (Ta), 42W (Tc)
Supplier Device PackageDIRECTFET™ ST
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 55A (Tc)

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Packing

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Vacuum packaged product
Step2: Vacuum Packaging
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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