Infineon Technologies IMCQ120R017M2HXTMA1

Infineon Technologies IMCQ120R017M2HXTMA1 electronic component

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Manufacturer No
IMCQ120R017M2HXTMA1
Package
22-PowerBSOP Module
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
SICFET N-CH 1200V 118A 22PWRBSOP
Detailed Description
N-Channel 1200 V 118A (Tc) 580W (Tc) Surface Mount PG-HDSOP-22
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Infineon Technologies
Series
CoolSiC™ G2
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
+23V, -7V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Surface Mount
Package / Case
22-PowerBSOP Module
Vgs(th) (Max) @ Id
5.1V @ 12.7mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
17.1mOhm @ 40A, 18V
Power Dissipation (Max)
580W (Tc)
Supplier Device Package
PG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs
91.1 nC @ 18 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
3730 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Current - Continuous Drain (Id) @ 25°C
118A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesCoolSiC™ G2
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)+23V, -7V
TechnologySiCFET (Silicon Carbide)
Mounting TypeSurface Mount
Package / Case22-PowerBSOP Module
Vgs(th) (Max) @ Id5.1V @ 12.7mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs17.1mOhm @ 40A, 18V
Power Dissipation (Max)580W (Tc)
Supplier Device PackagePG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs91.1 nC @ 18 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds3730 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Current - Continuous Drain (Id) @ 25°C118A (Tc)

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Payment Method

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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