Infineon Technologies IMCQ120R026M2HXTMA1

Infineon Technologies IMCQ120R026M2HXTMA1 electronic component

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Manufacturer No
IMCQ120R026M2HXTMA1
Package
22-PowerBSOP Module
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
SICFET N-CH 1200V 82A 22PWRBSOP
Detailed Description
N-Channel 1200 V 82A (Tc) 405W (Tc) Surface Mount PG-HDSOP-22-3
DataSheet
Mfr
Infineon Technologies
Series
CoolSiC™ G2
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
+23V, -7V
Technology
SiCFET (Silicon Carbide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
22-PowerBSOP Module
Vgs(th) (Max) @ Id
5.1V @ 8.6mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
25.4mOhm @ 27A, 18V
Power Dissipation (Max)
405W (Tc)
Supplier Device Package
PG-HDSOP-22-3
Gate Charge (Qg) (Max) @ Vgs
63.4 nC @ 18 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
2540 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
AttributeValue
MfrInfineon Technologies
SeriesCoolSiC™ G2
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)+23V, -7V
TechnologySiCFET (Silicon Carbide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case22-PowerBSOP Module
Vgs(th) (Max) @ Id5.1V @ 8.6mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs25.4mOhm @ 27A, 18V
Power Dissipation (Max)405W (Tc)
Supplier Device PackagePG-HDSOP-22-3
Gate Charge (Qg) (Max) @ Vgs63.4 nC @ 18 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds2540 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Current - Continuous Drain (Id) @ 25°C82A (Tc)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

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