Infineon Technologies FF2000UXTR33T2M1BPSA1

Infineon Technologies FF2000UXTR33T2M1BPSA1 electronic component

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Manufacturer No
FF2000UXTR33T2M1BPSA1
Package
Module
Packaging
Box
Description
MOSFET 2N-CH 3300V 9AG-XHP2K33
Detailed Description
Mosfet Array 3300V (3.3kV) 925A (Tc) Chassis Mount AG-XHP2K33
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
CoolSiC™, XHP™2
Packaging
Box
Technology
SiCFET (Silicon Carbide)
Manufacturer
Infineon Technologies
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
5.55V @ 900mA
Base Product Number
FF2000UXTR
Operating Temperature
-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
2.4mOhm @ 1000A, 15V
Supplier Device Package
AG-XHP2K33
Gate Charge (Qg) (Max) @ Vgs
5000nC @ 15V
Drain to Source Voltage (Vdss)
3300V (3.3kV)
Input Capacitance (Ciss) (Max) @ Vds
203000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C
925A (Tc)
AttributeValue
SeriesCoolSiC™, XHP™2
PackagingBox
TechnologySiCFET (Silicon Carbide)
ManufacturerInfineon Technologies
Configuration2 N-Channel (Half Bridge)
Mounting TypeChassis Mount
Package / CaseModule
Vgs(th) (Max) @ Id5.55V @ 900mA
Base Product NumberFF2000UXTR
Operating Temperature-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs2.4mOhm @ 1000A, 15V
Supplier Device PackageAG-XHP2K33
Gate Charge (Qg) (Max) @ Vgs5000nC @ 15V
Drain to Source Voltage (Vdss)3300V (3.3kV)
Input Capacitance (Ciss) (Max) @ Vds203000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C925A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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