iDEAL Semiconductor IS15M7R1S1C

iDEAL Semiconductor IS15M7R1S1C electronic component

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Manufacturer No
IS15M7R1S1C
Package
8-PowerDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 150V 133A PDFN-8
Detailed Description
N-Channel 150 V 133A (Tc) 250W (Tc) Surface Mount 8-PDFN (5x6)
DataSheet
Mfr
iDEAL Semiconductor
Series
SuperQ™
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerDFN
Vgs(th) (Max) @ Id
4.1V @ 127µA
Operating Temperature
-55°C ~ 175°C
Rds On (Max) @ Id, Vgs
6.4mOhm @ 23A, 10V
Power Dissipation (Max)
250W (Tc)
Supplier Device Package
8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Input Capacitance (Ciss) (Max) @ Vds
3893 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Current - Continuous Drain (Id) @ 25°C
133A (Tc)
AttributeValue
MfriDEAL Semiconductor
SeriesSuperQ™
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case8-PowerDFN
Vgs(th) (Max) @ Id4.1V @ 127µA
Operating Temperature-55°C ~ 175°C
Rds On (Max) @ Id, Vgs6.4mOhm @ 23A, 10V
Power Dissipation (Max)250W (Tc)
Supplier Device Package8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds3893 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C133A (Tc)

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