fastSiC FF12030M2E-3

fastSiC FF12030M2E-3 electronic component

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Manufacturer
Manufacturer No
FF12030M2E-3
Package
TO-247-3
Packaging
Tube
Description
SICFET N-CH 1200V 68A TO-247-3L
Detailed Description
N-Channel 1200 V 68A (Tc) 357W (Tc) Through Hole TO-247-3L
DataSheet
Mfr
fastSiC
Series
Falcon-M2
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+15V, -8V
Technology
SiCFET (Silicon Carbide)
Part Status
Active
Mounting Type
Through Hole
Qualification
AEC-Q101
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
2.5V @ 50mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
40mOhm @ 25A, 15V
Power Dissipation (Max)
357W (Tc)
Supplier Device Package
TO-247-3L
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 800 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
4198 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
AttributeValue
MfrfastSiC
SeriesFalcon-M2
FET TypeN-Channel
PackagingTube
Vgs (Max)+15V, -8V
TechnologySiCFET (Silicon Carbide)
Part StatusActive
Mounting TypeThrough Hole
QualificationAEC-Q101
Package / CaseTO-247-3
Vgs(th) (Max) @ Id2.5V @ 50mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs40mOhm @ 25A, 15V
Power Dissipation (Max)357W (Tc)
Supplier Device PackageTO-247-3L
Gate Charge (Qg) (Max) @ Vgs154 nC @ 800 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds4198 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)12V, 15V
Current - Continuous Drain (Id) @ 25°C68A (Tc)

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