Diodes Incorporated DMT15H017LPSW-13

Diodes Incorporated DMT15H017LPSW-13 electronic component

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Manufacturer No
DMT15H017LPSW-13
Package
8-PowerTDFN
Packaging
Tape & Reel (TR)
Description
MOSFET BVDSS: 101V~250V POWERDI5
Detailed Description
N-Channel 150 V 9.4A (Ta), 58A (Tc) 1.3W (Ta), 89W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.6V @ 250µA
Base Product Number
DMT15
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
17.5mOhm @ 20A, 10V
Power Dissipation (Max)
1.3W (Ta), 89W (Tc)
Supplier Device Package
PowerDI5060-8 (Type UX)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Input Capacitance (Ciss) (Max) @ Vds
3369 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 58A (Tc)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.6V @ 250µA
Base Product NumberDMT15
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs17.5mOhm @ 20A, 10V
Power Dissipation (Max)1.3W (Ta), 89W (Tc)
Supplier Device PackagePowerDI5060-8 (Type UX)
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds3369 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 58A (Tc)

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