Diodes Incorporated DMT12H007LPS-13

Diodes Incorporated DMT12H007LPS-13 electronic component

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Manufacturer No
DMT12H007LPS-13
Package
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N-CH 120V 90A PWRDI5060-8
Detailed Description
N-Channel 120 V 90A (Tc) 2.9W Surface Mount PowerDI5060-8
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
DMT12
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
7.8mOhm @ 30A, 10V
Power Dissipation (Max)
2.9W
Supplier Device Package
PowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Drain to Source Voltage (Vdss)
120 V
Input Capacitance (Ciss) (Max) @ Vds
3224 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberDMT12
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs7.8mOhm @ 30A, 10V
Power Dissipation (Max)2.9W
Supplier Device PackagePowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Drain to Source Voltage (Vdss)120 V
Input Capacitance (Ciss) (Max) @ Vds3224 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)

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Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

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