Step1: Product
Central Semiconductor Corp GES6016 PBFREE
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Manufacturer
Manufacturer No
GES6016 PBFREE
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Box
Description
60V 800MA 625MW TH TRANSISTOR-SM
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 800 mA 425MHz 625 mW Through Hole TO-92-3
Mfr
Central Semiconductor Corp
Packaging
Box
Power - Max
625 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type
NPN
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
425MHz
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)
800 mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
170 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)
60 V
| Attribute | Value |
|---|---|
| Mfr | Central Semiconductor Corp |
| Packaging | Box |
| Power - Max | 625 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Frequency - Transition | 425MHz |
| Supplier Device Package | TO-92-3 |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 100mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
